Electrical properties of nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs substrates
Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.M., Dvoretsky, S.A., Mikhailov, N.N., Sidorov, G.Yu., Yakushev, M.V.Volume:
102
Langue:
english
Journal:
Infrared Physics & Technology
DOI:
10.1016/j.infrared.2019.103035
Date:
November, 2019
Fichier:
PDF, 1.62 MB
english, 2019
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