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Highly efficient formation process for functional silicon oxide layers at low temperatures (≤ 120 °C) using very high-frequency plasma under atmospheric pressure
Kakiuchi, Hiroaki, Ohmi, Hiromasa, Yasutake, KiyoshiVolume:
60
Langue:
english
Journal:
Precision Engineering
DOI:
10.1016/j.precisioneng.2019.07.017
Date:
November, 2019
Fichier:
PDF, 3.77 MB
english, 2019