
[IEEE 2019 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2019.3.31-2019.4.4)] 2019 IEEE International Reliability Physics Symposium (IRPS) - Full ($V_{\mathrm{g}},\ V_{\mathrm{d}}$) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs
Vandemaele, Michiel, Kaczer, Ben, Tyaginov, Stanislav, Stanojevic, Zlatan, Makarov, Alexander, Chasin, Adrian, Bury, Erik, Mertens, Hans, Linten, Dimitri, Groeseneken, GuidoAnnée:
2019
Langue:
english
DOI:
10.1109/IRPS.2019.8720406
Fichier:
PDF, 1.16 MB
english, 2019