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Modern Aspects of Bulk Crystal and Thin Film Preparation || High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method
Kolesnikov, NikolaiVolume:
10.5772/13
Année:
2012
Langue:
english
DOI:
10.5772/28711
Fichier:
PDF, 1.02 MB
english, 2012