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Reliability Improvement of a Double-Sided IGBT Module by Lowering Stress Gradient Using Molybdenum Buffers
Wang, Meiyu, Mei, Yunhui, Liu, Wen, Xie, Yijing, Fu, Shancan, Li, Xin, Lu, Guo-QuanVolume:
7
Langue:
english
Journal:
IEEE Journal of Emerging and Selected Topics in Power Electronics
DOI:
10.1109/JESTPE.2019.2920254
Date:
September, 2019
Fichier:
PDF, 7.20 MB
english, 2019