Mechanically Robust and Highly Flexible Nonvolatile Charge‐Trap Memory Transistors Using Conducting‐Polymer Electrodes and Oxide Semiconductors on Ultrathin Polyimide Film Substrates
Yang, Ji‐Hee, Kim, Do‐Kyun, Yoon, Myung‐Han, Kim, Gi‐Heon, Yoon, Sung‐MinLangue:
english
Journal:
Advanced Materials Technologies
DOI:
10.1002/admt.201900348
Date:
August, 2019
Fichier:
PDF, 3.39 MB
english, 2019