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Schottky-barrier thin-film transistors based on HfO 2 -capped InSe
Wang, Yiming, Zhang, Jiawei, Liang, Guangda, Shi, Yanpeng, Zhang, Yifei, Kudrynskyi, Zakhar R., Kovalyuk, Zakhar D., Patanè, Amalia, Xin, Qian, Song, AiminVolume:
115
Journal:
Applied Physics Letters
DOI:
10.1063/1.5096965
Date:
July, 2019
Fichier:
PDF, 1.27 MB
2019