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[IEEE 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Kanazawa, Japan (2019.5.21-2019.5.25)] 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Room Temperature GaN-Si Bonding via an Intermediate Atomic-Layer-Deposition Al 2 O 3 Layer by Using O Ion Beam
Wang, Xinhua, Zhu, Shengli, Jiao, Binbin, Huang, Sen, Wei, Ke, Yin, Haibo, Fan, Jie, Liu, XinyuAnnée:
2019
Langue:
english
DOI:
10.23919/LTB-3D.2019.8735103
Fichier:
PDF, 1.14 MB
english, 2019