Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures
Chichibu, Shigefusa F., Shima, Kohei, Kojima, Kazunobu, Takashima, Shin-ya, Ueno, Katsunori, Edo, Masaharu, Iguchi, Hiroko, Narita, Tetsuo, Kataoka, Keita, Ishibashi, Shoji, Uedono, AkiraVolume:
58
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab0d06
Date:
June, 2019
Fichier:
PDF, 2.59 MB
2019
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