Back-End Integrable On-Chip MIM Decoupling Capacitors Featuring High Capacitance With Ultra-Low Leakage Current by Nitrogen-Incorporated HfZrO x
Chen, Kuen-Yi, Chen, Teng-Chuan, Kao, Ruei-Wen, Lin, Yan-Xiao, Hsieh, Kuan-Ying, Wu, Yung-HsienVolume:
18
Année:
2019
Langue:
english
Journal:
IEEE Transactions on Nanotechnology
DOI:
10.1109/TNANO.2019.2915815
Fichier:
PDF, 1.40 MB
english, 2019
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