InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region
Gregušová, Dagmar, Tóth, Lajos, Pohorelec, Ondrej, Hasenöhrl, Stanislav, Haščík, Štefan, Cora, Ildikó, Fogarassy, Zsolt, Stoklas, Roman, Seifertová, Alena, Blaho, Michal, Laurenčíková, Agáta, Oyobiki,Volume:
58
Langue:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab06b8
Date:
June, 2019
Fichier:
PDF, 834 KB
english, 2019