Electrical characteristic of atomic layer deposition La 2 O 3 /Si MOSFETs with ferroelectric-type hysteresis
Endo, Kiyoshi, Kato, Kimihiko, Takenaka, Mitsuru, Takagi, ShinichiVolume:
58
Langue:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/aafecf
Date:
April, 2019
Fichier:
PDF, 2.05 MB
english, 2019