
Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge
Igumbor, E., Dongho-Nguimdo, G. M., Mapasha, R. E., Meyer, W. E.Langue:
english
Journal:
Journal of Materials Science
DOI:
10.1007/s10853-019-03627-0
Date:
May, 2019
Fichier:
PDF, 1.28 MB
english, 2019