Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2019 / 03 Vol. 37; Iss. 2

High-throughput process chain for single electron transistor devices based on field-emission scanning probe lithography and Smart Nanoimprint lithography technology
Lenk, Claudia, Krivoshapkina, Yana, Hofmann, Martin, Lenk, Steve, Ivanov, Tzvetan, Rangelow, Ivo W., Ahmad, Ahmad, Reum, Alexander, Holz, Mathias, Glinsner, Thomas, Eibelhuber, Martin, Treiblmayr, DomVolume:
37
Langue:
english
Journal:
Journal of Vacuum Science & Technology B
DOI:
10.1116/1.5067269
Date:
March, 2019
Fichier:
PDF, 5.69 MB
english, 2019