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Controlling resistive switching by using optimized MoS 2 interfacial layer and the role of top electrodes on ascorbic acid sensing in TaO x -based RRAM
Qiu, Jian-Tai, Samanta, Subhranu, Dutta, Mrinmoy, Ginnaram, Sreekanth, Maikap, SiddheswarLangue:
english
Journal:
Langmuir
DOI:
10.1021/acs.langmuir.8b04090
Date:
February, 2019
Fichier:
PDF, 4.11 MB
english, 2019