[IEEE 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Qingdao, China (2018.10.31-2018.11.3)] 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - A High Performance DRAM Design Using U-FinFET as Access Transistor
Wen, Meng-Qi, Ye, Zhi-Yuan, Li, Yue, Su, Zheng-Yuan, Yao, Yao, Liu, Lei, Wang, Peng-FeiAnnée:
2018
Langue:
english
DOI:
10.1109/ICSICT.2018.8564889
Fichier:
PDF, 1.66 MB
english, 2018