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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Analysis of Transient Gate-Source OverVoltages in Silicon Carbide MOSFET Power Devices
Pulvirenti, Mario, Montoro, Gionatan, Nania, Massimo, Scollo, Rosario, Scelba, Giacomo, Cacciato, Mario, Scarcella, Giuseppe, Salvo, LucianoAnnée:
2018
Langue:
english
DOI:
10.1109/ECCE.2018.8557519
Fichier:
PDF, 1.91 MB
english, 2018