Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping
Hu, Yong, Shi, Dong, Hu, Ye, Zhao, Hongwei, Sun, XingdongVolume:
11
Langue:
english
Journal:
Materials
DOI:
10.3390/ma11102022
Date:
October, 2018
Fichier:
PDF, 3.71 MB
english, 2018