Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1−xN Layers
Cai, Yuefei, Zhu, Chenqi, Jiu, Ling, Gong, Yipin, Yu, Xiang, Bai, Jie, Esendag, Volkan, Wang, TaoVolume:
11
Langue:
english
Journal:
Materials
DOI:
10.3390/ma11101968
Date:
October, 2018
Fichier:
PDF, 2.40 MB
english, 2018