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Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors
Roinila, Tomi, Yu, Xiao, Verho, Jarmo, Li, Tie, Kallio, Pasi, Vilkko, Matti, Gao, Anran, Wang, YuelinVolume:
5
Langue:
english
Journal:
Beilstein Journal of Nanotechnology
DOI:
10.3762/bjnano.5.110
Date:
July, 2014
Fichier:
PDF, 1.92 MB
english, 2014