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Mechanism of Formation of Carbon–Vacancy Structures in Silicon Carbide during Its Growth by Atomic Substitution
Kukushkin, S. A., Osipov, A. V.Volume:
60
Langue:
english
Journal:
Physics of the Solid State
DOI:
10.1134/S1063783418090184
Date:
September, 2018
Fichier:
PDF, 944 KB
english, 2018