Degradation behavior of AlGaN-based 233 nm deep-ultraviolet light emitting diodes
Glaab, Johannes, Ruschel, Jan, Mehnke, Frank, Lapeyrade, Mickael, Gutmann, Martin, Wernicke, Tim, Weyers, Markus, Einfeldt, Sven, Kneissl, MichaelLangue:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aad765
Date:
August, 2018
Fichier:
PDF, 813 KB
english, 2018