[IEEE 2018 7th International Symposium on Next Generation Electronics (ISNE) - Taipei, Taiwan (2018.5.7-2018.5.9)] 2018 7th International Symposium on Next Generation Electronics (ISNE) - P16 INK4a detection using an ultra-sensitive silicon nanowire field effect transistor
Hung, Jia-Yang, Manga, Yankuba B., Chen, Yu-Ju, Huang, Haw-Ming, Yang, Wen-Luh, Wu, Chi-ChangAnnée:
2018
Langue:
english
DOI:
10.1109/ISNE.2018.8394715
Fichier:
PDF, 363 KB
english, 2018