Proton-Conductor-Gated MoS2 Transistors with Room Temperature Electron Mobility of >100 cm2V-1s-1
Choi, Yongsuk, Kim, Hyunwoo, Yang, Jeehye, Shin, Seung Won, Um, Soong Ho, Lee, Sungjoo, Kang, Moon Sung, Cho, Jeong HoLangue:
english
Journal:
Chemistry of Materials
DOI:
10.1021/acs.chemmater.8b00568
Date:
June, 2018
Fichier:
PDF, 1.70 MB
english, 2018