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Memristive behaviour of Si-Al oxynitride thin films: The role of oxygen and nitrogen vacancies in the electroforming process
Blázquez, Oriol, Martín, Gemma, Camps, Ivan, Mariscal, Antonio, López-Vidrier, Julian, Ramirez, Joan Manel, Hernández, Sergi, Estrade, Sonia, Peiro, Francesca, Serna, Rosalía, Garrido, BlasLangue:
english
Journal:
Nanotechnology
DOI:
10.1088/1361-6528/aab744
Date:
March, 2018
Fichier:
PDF, 777 KB
english, 2018