Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer
Han, Tiecheng, Zhao, Hongdong, Peng, Xiaocan, Li, YuhaiLangue:
english
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2018.02.031
Date:
February, 2018
Fichier:
PDF, 571 KB
english, 2018