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[IEEE 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Beijing (2017.11.1-2017.11.3)] 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - 650 V Dispersion-free enhancement-mode GaN-on-Si HEMTs processed in a 200 mm CMOS Fab
Kim, J.-Y., Lee, D., Kim, Y. S., Son, J., Luo, W., Marcon, D., Decoutere, S.Année:
2017
Langue:
english
DOI:
10.1109/IFWS.2017.8246002
Fichier:
PDF, 480 KB
english, 2017