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Direct observation of changes in the effective minority-carrier lifetime of SiN x -passivated n-type crystalline-silicon substrates caused by potential-induced degradation and recovery tests
Nishikawa, Naoyuki, Yamaguchi, Seira, Ohdaira, KeisukeVolume:
79
Langue:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2017.10.012
Date:
December, 2017
Fichier:
PDF, 543 KB
english, 2017