Long-wavelength strained-layer InAs/GaInAs single-quantum-well laser grown by molecular beam epitaxy on InP substrate
Tournié, E., Grunberg, P., Fouillant, C., Kadret, S., Boissier, B., Baranov, A., Joullié, A., Gaumont-Goarin, E., Ploog, K.H.Volume:
29
Année:
1993
Langue:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19930839
Fichier:
PDF, 305 KB
english, 1993