Resistive Random Access Memory: Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High- k Spacer Structure (Adv. Electron. Mater. 9/2017)
Tseng, Yi-Ting, Chen, Po-Hsun, Chang, Ting-Chang, Chang, Kuan-Chang, Tsai, Tsung-Ming, Shih, Chih-Cheng, Huang, Hui-Chun, Yang, Cheng-Chi, Lin, Chih-Yang, Wu, Cheng-Hsien, Zheng, Hao-Xuan, Zhang, ShenVolume:
3
Journal:
Advanced Electronic Materials
DOI:
10.1002/aelm.201770041
Date:
September, 2017
Fichier:
PDF, 2.45 MB
2017
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