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Electrical performance and low frequency noise in hexagonal boron nitride encapsulated MoSe 2 dual-gated field effect transistors
Liao, Wugang, Wei, Wei, Tong, Yu, Chim, Wai Kin, Zhu, ChunxiangVolume:
111
Langue:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4993233
Date:
August, 2017
Fichier:
PDF, 1.64 MB
english, 2017