Study of the interface stability of the metal (Mo, Ni, Pd)/HfO 2 /AlN/InGaAs MOS devices
Do, Huy Binh, Luc, Quang Ho, Ha, Minh Thien Huu, Huynh, Sa Hoang, Nguyen, Tuan Anh, Lin, Yueh Chin, Chang, Edward YiVolume:
7
Langue:
english
Journal:
AIP Advances
DOI:
10.1063/1.4986147
Date:
August, 2017
Fichier:
PDF, 3.78 MB
english, 2017