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Tri-halide vapor-phase epitaxy of GaN using GaCl 3 on polar, semipolar, and nonpolar substrates
Iso, Kenji, Takekawa, Nao, Matsuda, Karen, Hikida, Kazuhiro, Hayashida, Naoto, Murakami, Hisashi, Koukitu, AkinoriVolume:
9
Langue:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.9.105501
Date:
October, 2016
Fichier:
PDF, 708 KB
english, 2016