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Editors' Choice—Vertically Integrated Nanowire-Based Zero-Capacitor Dynamic Random Access Memory
Lee, Byung-Hyun, Kang, Min-Ho, Ahn, Dae-Chul, Choi, Yang-KyuVolume:
6
Année:
2017
Langue:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.0011701jss
Fichier:
PDF, 1.07 MB
english, 2017