AlGaN/GaN MOS-HEMT Device Fabricated Using a High Quality PECVD Passivation Process
Chakroun, Ahmed, Jaouad, Abdelatif, Soltani, Ali, Arenas, Osvaldo, Aimez, Vincent, Ares, Richard, Maher, HassanVolume:
38
Langue:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2017.2696946
Date:
June, 2017
Fichier:
PDF, 1.47 MB
english, 2017