
Resistive switching effect in the planar structure of all-printed, flexible and rewritable memory device based on advanced 2D nanocomposite of graphene quantum dots and white-graphene flakes
Rehman, Muhammad Muqeet, Siddiqui, Ghayas Uddin, Kim, Sowon, Choi, Kyung HyunLangue:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/1361-6463/aa798a
Date:
June, 2017
Fichier:
PDF, 1.59 MB
english, 2017