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Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide
Egorov, V. K., Egorov, E. V., Kukushkin, S. A., Osipov, A. V.Volume:
59
Langue:
english
Journal:
Physics of the Solid State
DOI:
10.1134/S1063783417040072
Date:
April, 2017
Fichier:
PDF, 829 KB
english, 2017