Millimeter-Wave GaN HEMTs With Cavity-Gate Structure Using MSQ-Based Inter-Layer Dielectric
Ozaki, Shiro, Makiyama, Kozo, Ohki, Toshihiro, Kamada, Yoichi, Sato, Masaru, Niida, Yoshitaka, Okamoto, Naoya, Joshin, KazukiyoVolume:
29
Langue:
english
Journal:
IEEE Transactions on Semiconductor Manufacturing
DOI:
10.1109/tsm.2016.2599184
Date:
November, 2016
Fichier:
PDF, 1.48 MB
english, 2016
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