Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy
Sugawara, Yoshihiro, Ishikawa, Yukari, Watanabe, Arata, Miyoshi, Makoto, Egawa, TakashiVolume:
6
Langue:
english
Journal:
AIP Advances
DOI:
10.1063/1.4948451
Date:
April, 2016
Fichier:
PDF, 3.86 MB
english, 2016