SPIE Proceedings [SPIE The International Conference on Micro- and Nano-Electronics 2016 - Zvenigorod, Russian Federation (Monday 3 October 2016)] International Conference on Micro- and Nano-Electronics 2016 - I-V characteristics simulation of silicon carbide Ti/4H-SiC Schottky diode
Lukichev, Vladimir F., Rudenko, Konstantin V., Panchenko, P., Rybalka, S., Malakhanov, A., Krayushkina, E., Radkov, A.Volume:
10224
Année:
2016
Langue:
english
DOI:
10.1117/12.2267088
Fichier:
PDF, 281 KB
english, 2016