[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - FinFET performance with Si:P and Ge:Group-III-Metal metastable contact trench alloys
Gluschenkov, O., Liu, Z., Niimi, H., Mochizuki, S., Fronheiser, J., Miao, X., Li, J., Demarest, J., Zhang, C., Niu, C., Liu, B., Petrescu, A., Adusumilli, P., Yang, J., Jagannathan, H., Bu, H., YamashAnnée:
2016
Langue:
english
DOI:
10.1109/IEDM.2016.7838437
Fichier:
PDF, 608 KB
english, 2016
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