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Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate
Yamaoka, Yuya, Kakamu, Ken, Ubukata, Akinori, Yano, Yoshiki, Tabuchi, Toshiya, Matsumoto, Koh, Egawa, TakashiVolume:
214
Langue:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201600618
Date:
March, 2017
Fichier:
PDF, 1.01 MB
english, 2017