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[IEEE 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, Hong Kong (2016.8.3-2016.8.5)] 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - The immunity of doping-less junctionless transistor variations including the line edge roughness
Wan, Wenbo, Lou, Haijun, Xiao, Ying, Lin, XinnanAnnée:
2016
DOI:
10.1109/EDSSC.2016.7785211
Fichier:
PDF, 240 KB
2016