[IEEE 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2016.4.25-2016.4.27)] 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - PMOS contact resistance solution compatible to CMOS integration for 7 nm node and beyond
Ni, C.-N., Huang, Y.-C., Jun, S., Sun, S., Vyas, A., Khaja, F., Rao, K.V., Sharma, S., Breil, N., Jin, M., Lazik, C., Mayur, A., Gelatos, J., Chung, H., Hung, R., Chudzik, M., Yoshida, N., Kim, N.Année:
2016
Langue:
english
DOI:
10.1109/vlsi-tsa.2016.7480531
Fichier:
PDF, 753 KB
english, 2016
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