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Effects of high-temperature diluted-H 2 annealing on effective mobility of 4H-SiC MOSFETs with thermally-grown SiO 2
Hirai, Hirohisa, Kita, KojiVolume:
55
Langue:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.04ER16
Date:
April, 2016
Fichier:
PDF, 637 KB
english, 2016