[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - A recessed gate LDMOSFET for alleviating HCI effects
Fujii, Hiroki, Mori, Takahiro, Ipposhi, TakashiAnnée:
2016
Langue:
english
DOI:
10.1109/ISPSD.2016.7520804
Fichier:
PDF, 627 KB
english, 2016