High-temperature studies of multiple fluorinated traps within an Al 2 O 3 gate dielectric for E-Mode AlGaN/GaN power MIS-HEMTs
Wang, Yun-Hsiang, Liang, Yung C, Samudra, Ganesh S, Chu, Po-Ju, Liao, Ya-Chu, Huang, Chih-Fang, Kuo, Wei-Hung, Lo, Guo-QiangVolume:
31
Langue:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/31/2/025004
Date:
February, 2016
Fichier:
PDF, 1.40 MB
english, 2016
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