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Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films
Kaganer, Vladimir M, Jenichen, Bernd, Ramsteiner, Manfred, Jahn, Uwe, Hauswald, Christian, Grosse, Frank, Fernández-Garrido, Sergio, Brandt, OliverVolume:
48
Langue:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/48/38/385105
Date:
September, 2015
Fichier:
PDF, 1.41 MB
english, 2015