[IEEE 2015 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2015.12.7-2015.12.9)] 2015 IEEE International Electron Devices Meeting (IEDM) - First monolithic integration of Ge P-FETs and InAs N-FETs on silicon substrate: Sub-120 nm III-V buffer, sub-5 nm ultra-thin body, common raised S/D, and gate stack modules
Yadav, Sachin, Tan, Kian-Hua, Annie,, Goh, Kian Hui, Subramanian, Sujith, Low, Kain Lu, Chen, Nanyan, Jia, Bowen, Yoon, Soon-Fatt, Liang, Gengchiau, Gong, Xiao, Yeo, Yee-ChiaAnnée:
2015
Langue:
english
DOI:
10.1109/iedm.2015.7409612
Fichier:
PDF, 1.01 MB
english, 2015
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