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GaN HEMT-based >1 GHz Speed Low-Side Gate Driver and Switch Monolithic Process for 865 MHz Power Conversion Applications
Mehrotra, Vivek, Arias, Andrea, Neft, Charles, Bergman, Joshua, Urteaga, Miguel, Brar, BerinderAnnée:
2016
Langue:
english
Journal:
IEEE Journal of Emerging and Selected Topics in Power Electronics
DOI:
10.1109/jestpe.2016.2564946
Fichier:
PDF, 1.73 MB
english, 2016